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Ultrafast Photo-Triggered Field Emission Cathodes Using Massive, Uniform Arrays of Nano-Sharp High-Aspect-Ratio Silicon Structures

机译:超快光触发的场发射阴极,使用大规模,均匀的纳米锐化高纵横比硅结构阵列

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摘要

We report the design, fabrication, and experimental characterization of a novel ultrafast optical field emission cathode comprised of a large and dense array of nano-sharp high-aspect-ratio single-crystal silicon columns (>100,000 tips, 4.6-million tips.cm-2). The cathode emits electrons with as little as 25 nJ and can produce up to 2.54 pC electron bunches per laser pulse when interacting with 35 fs 800 nm laser pulses with a 765 μm by 80 μm elliptical spot size. This is the first report of current measurements from Si tip arrays using photo-field emission; in addition, this is the first demonstration of a photocathode array that, depending on the energy of the laser pulses, can emit in the multi-photon or the tunnelling regime.
机译:我们报告了一种新型的超快光场发射阴极的设计,制造和实验表征,该阴极由大型且密集的纳米锐化高纵横比单晶硅柱(> 100,000个尖端,460万个tip.cm)组成。 -2)。当与具有765μmx 80μm椭圆光斑尺寸的35 fs 800 nm激光脉冲相互作用时,阴极发射的电子低至25 nJ,每个激光脉冲最多可产生2.54 pC电子束。这是关于使用光场发射从硅尖端阵列进行电流测量的第一份报告。此外,这是光阴极阵列的首次演示,该阵列可根据激光脉冲的能量以多光子或隧穿形式发射。

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